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參數(shù)資料
| 型號(hào)： | MH8D64AKQC-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | JT 55C 55#20 SKT PLUG |
| 中文描述： | 536870912位（8388608字，64位），雙數(shù)據(jù)速率同步DRAM模塊 |
| 文件頁數(shù)： | 22/40頁 |
| 文件大?。?/td> | 340K |
| 代理商： | MH8D64AKQC-10 |
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MH8D64AKQC-75,-10
536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0419-0.1
17.May.2001
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
22
A precharge command can be issued at BL/2 from a read command without data loss.
Precharge all
Bank Activation and Precharge All (BL=8, CL=2)
Command
A0-9,11
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
0
00
ACT
Xb
Xb
01
PRE
tRRD
tRCD
1
ACT
Xb
Xb
01
tRAS
tRP
tRCmin
2 ACT command / tRCmin
DQS
Q a
BL/2
OPERATIONAL DESCRIPTION
(Component Level)
BANK ACTIVATE
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command
with the bank addresses (BA0,1). A row is indicated by the row address A11-0. The minimum
activation interval between one bank and the other bank is tRRD. Maximum 2 ACT commands
are allowed within tRC,although the number of banks which are active concurrently is not limited.
PRECHARGE
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active,
the precharge all command (PREA,PRE+A10=H) is available to deactivate them at the same
time. After tRP from the precharge, an ACT command to the same bank can be issued.
Q a
Q a
Q a
Q a
Q a
Q a
Q a
/CLK
CLK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MH8D64AKQC-75 | Circular Connector; No. of Contacts:21; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No |
| MH8V7245BAZTJ-5 | Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-5 |
| MH8V7245BWZTJ-5 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:14-5 |
| MH8V7245BAZTJ-6 | HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM |
| MH8V7245BWZTJ-6 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH8D64AKQC-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
| MH-8F | 功能描述:通用繼電器 RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:1 Form A (SPST-NO) 觸點(diǎn)電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點(diǎn)材料: |
| MH8S64AQFC-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
| MH8S64AQFC-6L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
| MH8S64AQFC-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM |
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