參數資料
型號: MH28D72KLG-10
廠商: Mitsubishi Electric Corporation
英文描述: 9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
中文描述: 9663676416位(134217728 - Word的72位),雙數據速率同步DRAM模塊
文件頁數: 28/39頁
文件大?。?/td> 337K
代理商: MH28D72KLG-10
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH28D72KLG-75,-10
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0412-0.1
21.Mar.2001
Preliminary Spec.
Some contents are subject to change without notice.
28
[Read Interrupted by Burst Stop]
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM
interval is minimum 1 CLK. A TERM command to output disable latency is equivalent to the /CAS
Latency. As a result, READ to TERM interval determines valid data length to be output. The figure
below shows examples of BL=8.
Read Interrupted by TERM (BL=8)
CL=2.5
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
/CLK
CLK
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
CL=2.0
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
Module input and output timing.
Discrete
CL=3.5
Module
Discrete
CL=3.0
Module
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MH28D72KLG-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
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