參數(shù)資料
型號: MGSF3454X
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, TSOP-6
文件頁數(shù): 23/35頁
文件大小: 358K
代理商: MGSF3454X
MGSF3454XT1
4–51
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 3. On–Resistance versus Drain Current
Figure 4. Capacitance
Figure 5. Gate Charge
Figure 6. On–Resistance versus Junction
Temperature
Figure 7. On–Resistance versus Junction
Temperature
Figure 8. Source–Drain Diode Forward Voltage
3.0
ID, DRAIN CURRENT (AMPS)
0.16
0.12
0.14
0.10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0
100
10
0
QG, TOTAL GATE CHARGE (nC)
10
8.0
6.0
4.0
2.0
0
TJ, JUNCTION TEMPERATURE (°C)
–55
1.4
1.3
1.2
1.0
0.8
0.6
–5.0
45
–55
TJ, JUNCTION TEMPERATURE (°C)
1.6
1.4
1.3
1.2
0.7
0.6
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.2
0.8
0
10
1.0
0.1
0.01
0.001
0.5
–5.0
V
0.08
0.06
1.0
0.5
1.5
2.0
20
24
4.0
8.0
12
16
1000
2.0
4.0
6.0
8.0
45
95
145
95
1.5
0.1
0.3
0.4
0.9
1.0
0.6
0.7
0.04
0
C,
CAP
ACIT
ANCE
(pF)
2.5
R
,ON–R
E
SIS
TANC
E
(
)
DS(on)
W
,G
A
TE
–T
O–SOURC
E
V
O
LT
A
GE
(
V
O
LT
S)
GS
R
,ON–RESIST
ANCE
(NORMALIZED)
DS(on)
0.7
0.9
1.1
R
,ON–RESIST
ANCE
(NORMALIZED)
DS(on)
0.8
0.9
1.0
1.1
I
,SOURCE
CURRENT
(AMPS)
S
TJ = 150°C
VGS = 4.5 V
25
°C
–55
°C
VGS = 0 V
f = 1.0 MHz
TJ = 25°C
Ciss
Coss
Crss
VDS = 24 V
TJ = 25°C
ID = 10 A
ID = 1.5 A
VGS = 4.5 V
ID = 6.4 A
VGS = 10 V
TJ = 150°C
–55
°C
25
°C
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