參數(shù)資料
型號: MGSF3454X
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, TSOP-6
文件頁數(shù): 12/35頁
文件大?。?/td> 358K
代理商: MGSF3454X
MGSF3454XT1
4–50
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
30
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
1.0
25
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
±100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.75 A)
(VGS = 4.5 Vdc, ID = 1.5 A)
rDS(on)
0.05
0.07
0.065
0.095
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
345
pF
Output Capacitance
(VDS = 5.0 V)
Coss
215
Transfer Capacitance
(VDG = 5.0 V)
Crss
140
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
10
ns
Rise Time
(VDD = 10 Vdc, ID = 1.0 A,
tr
15
Turn–Off Delay Time
( DD
D
VGEN = 10 V, RL = 10 )
td(off)
20
Fall Time
tf
10
Gate Charge
QT
15
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
1.0
A
Pulsed Current
ISM
5.0
A
Forward Voltage(2)
VSD
1.2
V
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Output Characteristics
Figure 2. On–Resistance versus Drain Current
7.0
10
1.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
7.0
6.0
4.0
5.0
3.0
ID, DRAIN CURRENT (AMPS)
7.0
0
0.10
0.06
0.04
0.02
I D
,DRAIN
CURRENT
(AMPS)
R
2.0
1.0
4.0
2.0
3.0
5.0
6.0
8.0
9.0
5.0
6.0
1.0
2.0
3.0
4.0
0.08
0.12
0
,ON–RESIST
ANCE
(
)
DS(on)
W
VGS = 10 V
TJ = 150°C
VGS = 4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
2.25 V
25
°C
–55
°C
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