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參數(shù)資料
| 型號： | MGP15N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 99K |
| 代理商： | MGP15N35CL |
MGP15N35CL, MGB15N35CL, MGC15N35CL
http://onsemi.com
2
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ
Characteristic
150
°
C)
Symbol
Value
Unit
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25
°
C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150
°
C
THERMAL CHARACTERISTICS
EAS
300
150
mJ
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
°
C/W
Thermal Resistance, Junction to Ambient
TO–220
D2PAK
62.5
50
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
275
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
BVCES
IC = 2 mA
TJ = –40
°
C to 175
°
C
320
350
380
VDC
Zero Gate Voltage Collector Current
ICES
VCE = 300 V,
VGE = 0, TJ = 25
°
C
–
–
40
μ
ADC
VCE = 300 V,
VGE = 0, TJ = 150
°
C
–
–
200
Reverse Collector–Emitter Leakage Current
IECS
BVGES
IGES
RG
RGE
VCE = –24 V
IG = 5 mA
VGE = 10 V
–
–
–
1.0
mA
Gate–Emitter Clamp Voltage
17
–
22
VDC
μ
ADC
Gate–Emitter Leakage Current
384
–
1000
Gate Resistor (Optional)
–
70
–
Gate Emitter Resistor
–
10
–
26
k
ON CHARACTERISTICS*
Gate Threshold Voltage
VGE(th)
IC = 1 mA
VGE = VCE
1.0
1.8
2.1
VDC
Threshold Temperature Coefficient (Negative)
–
–
–
4.4
–
mV/
°
C
Collector–to–Emitter On–Voltage
VCE(on)
VCE(on)
IC = 6 A, VGE = 4 V
IC = 10 A,
VGE = 4.5 V,
TJ = 150
°
C
–
–
1.8
VDC
VDC
Collector–to–Emitter On–Voltage
–
–
1.8
Forward Transconductance
gfs
VCE = 5 V, IC = 6 A
8.0
15
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VCC = 15 V
–
1000
–
pF
Output Capacitance
COSS
CRSS
VGE = 0 V
f = 1 MHz
–
130
–
Transfer Capacitance
–
5.0
–
*Pulse Test: Pulse Width
300
μ
S, Duty Cycle
2%.
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| MGP15N40CL | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| MGP15N40CLG | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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