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參數(shù)資料
| 型號(hào)： | MGC15N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 380 V, N-CHANNEL IGBT |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | MGC15N35CL |
Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 0
1
Publication Order Number:
MGP15N35CL/D
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCER
VGE
IC
380
VDC
VDC
VDC
ADC
Collector–Gate Voltage
380
Gate–Emitter Voltage
22
Collector Current–Continuous
@ TC = 25
°
C
15
Total Power Dissipation
@ TC = 25
°
C
Derate above 25
°
C
PD
136
1.0
Watts
W/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°
C
N–CHANNEL IGBT
15 A, 350 V
VCE(on) = 1.8 V MAX
http://onsemi.com
TO–220
CASE 221A
STYLE 9
MARKING
DIAGRAMS
GCE
D2PAK
CASE 418B
STYLE 3
Device
Package
Shipping
ORDERING INFORMATION
MGP15N35CL
TO–220
50 Units/Rail
MGC15N35CL
Die Options
Not Applicable
MGB15N35CLT4
D2PAK
800 Tape & Reel
C
E
G
RGE
RG
GB15N35CL
ALYYWW
ALYYWW
GP15N35CL
A
WL, L
YY, Y
WW, W = Work Week
= Assembly Location
= Wafer Lot
= Year
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