| 型號: | MGFL45V1920 |
| 元件分類: | 功率晶體管 |
| 英文描述: | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝: | GF-38, 2 PIN |
| 文件頁數(shù): | 1/3頁 |
| 文件大?。?/td> | 301K |
| 代理商: | MGFL45V1920 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFL48V1920 | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS44V2527-01 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS44V2527-51 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS44V2735 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS45B2527B | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFL45V1920A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFL45V1920A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 32W |
| MGFL48L1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 60W GaAs FET |
| MGFL48V1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |