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參數(shù)資料
| 型號(hào)： | MGFS45B2527B |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-60, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 189K |
| 代理商： | MGFS45B2527B |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45B2527B
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFS45B2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 - 2.7
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT) = 30W (TYP.) @ f=2.5 - 2.7 GHz
High power gain
GLP = 12.5 dB (TYP.) @ f=2.5 - 2.7 GHz
Distortion
EVM = 1% (TYP.) @ f=2.5 - 2.7 GHzPo=34dBm
EVM = 2% (TYP.) @ f=2.5 - 2.7 GHzPo=37dBm
RECOMMENDED BIAS CONDITIONS
VDS = 12 (V)
ID = 0.9 (A)
RG=10 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-10
V
MAXID
Maximum drain current
10
A
PT *1
Total power dissipation
78
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-55 / +150
deg.C
*1 : Tc=25deg.C
ELECTRICAL CARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 100mA
-0.5
-
-3.0
V
Po(SAT)
Output power
VDS=12V, ID(RF off)=0.9A, f=2.5-2.7GHz
-
45
-
dBm
GLP
Linear power gain
10.0
12.5
-
dB
ID
Drain current
VDS=12V, ID(RF off)=0.9A, f=2.5-2.7GHz
-
1.2
1.5
A
EVM *2
Error Vector Magnitude
Pout=34dBm
-
1.0
2.0
%
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
1.2
1.9
deg.C/W
*2 :WiMAX Downlink, 64QAM-3/4, Channel Bandwidth: 6MHz
*3 : Channel-case
( 1 / 4 )
Spe. 2007
MITSUBISHI
ELECTRIC
OUTLINE DRAWING
GF-60
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to
change.
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort
into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to
personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
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| MGFS45V2325A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS45V2527A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFS45V2123 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFS45V2123A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.1-2.3 GHz BAND / 32W |
| MGFS45V2325 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
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