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參數(shù)資料
| 型號(hào)： | MGFK44A4045 |
| 元件分類： | 功率晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 354K |
| 代理商： | MGFK44A4045 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK44A4045
14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFK44A4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0-14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
·Internally impedance matched
·High output power
P1dB = 44.0dBm(TYP.) @f=14.0-14.5GHz
·High linear power gain
GLP = 6.0dB(TYP) @f=14.0-14.5GHz
APPLICATION
·For use in 14.0-14.5GHz band amplifiers
QUALITY GRADE
·IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID(Rfoff) =6.0 (A)
Rg=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
< Keep safety first in your circuit designs! >
VGSO
Gate to source voltage
-10
V
Mitsubishi Electric Corporation puts the maximum effort into
ID
Drain current
20
A
making semiconductor products better and more reliable,
IGR
Reverse gate current
-72
mA
but there is always the possibility that trouble may occur
IGF
Forward gate current
144
mA
with them.Trouble with semiconductors may lead to personal
PT *1
Total power dissipation
100
W
injury, fire or property damage. Remember to give due
Tch
Channel temperature
175
deg.C
consideration to safety when making your circuit designs,
Tstg
Storage temperature
-65 / +175
deg.C
with appropriate measures such as (1)placement of
*1 : Tc=25deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VG=0V
--
16.0
--
A
gm
Transconductance
VDS=0V,ID=6.0A
--
6
--
S
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=80mA
-1.0
-1.5
-4.0
V
P1dB
Output power at 1dB gain
compression
43
44
--
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=6.0A, f=14.0 - 14.5GHz
5.0
6.0
--
dB
P.A.E.
Power added efficiency
--
17
--
%
Rth (Ch-C)
Thermal resistance
Channel to Case
--
1.2
1.5
deg.C/W
Jul-04
MITSUBISHI
ELECTRIC
24 +/- 0.3
(1)
20.4 +/- 0.2
16.7
GF-38
4
.3
+
/-
0
.4
1
.4
2
M
IN
OUTLINE DRAWING
1
7
.4
+
/-
0
.2
8
.0
+
/-
0
.2
R 1.2
2
M
IN
0
.1
+
/-
0
.0
5
2
.4
+
/-
0
.2
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
(3)
(2)
Unit : millimeters
0.6 +/- 0.15
(1/4)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFK44A4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 25W |
| MGFL45V1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFL45V1920A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 32W |
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