| 型號: | MGFK38V2732 |
| 廠商: | Mitsubishi Electric Corporation |
| 英文描述: | RECTIFIER BRIDGE 10A 50V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
| 中文描述: | 12.7 - 13.2GHz頻段6W內(nèi)部匹配砷化鎵場效應(yīng)管 |
| 文件頁數(shù): | 5/5頁 |
| 文件大?。?/td> | 410K |
| 代理商: | MGFK38V2732 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFL45V1920A | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920 | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFX39V0717 | 10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET |
| MGP11N60ED | 11A,600V Insulated Gate Biploar Transistor with Anti-Parallel Diode(N-Channel Enhancement-Mode Silicon Gate)(帶軟恢復(fù)超快速整流器的絕緣柵雙極性晶體管(N溝道增強(qiáng)型硅門)) |
| MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFK39V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 8W |
| MGFK39V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 8W |
| MGFK41A4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 12W |
| MGFK44A4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET |
| MGFK44A4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 25W |