| 型號: | MGFL45V1920 |
| 廠商: | Mitsubishi Electric Corporation |
| 英文描述: | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| 中文描述: | 1.9 - 2.0GHz的頻段32W國內(nèi)MATCHD砷化鎵場效應(yīng)管 |
| 文件頁數(shù): | 1/3頁 |
| 文件大?。?/td> | 301K |
| 代理商: | MGFL45V1920 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFX39V0717 | 10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET |
| MGP11N60ED | 11A,600V Insulated Gate Biploar Transistor with Anti-Parallel Diode(N-Channel Enhancement-Mode Silicon Gate)(帶軟恢復(fù)超快速整流器的絕緣柵雙極性晶體管(N溝道增強型硅門)) |
| MGP11N60ED | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| MGP20N40CL | CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| MGP20N40CL | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFL45V1920A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFL45V1920A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 32W |
| MGFL48L1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 60W GaAs FET |
| MGFL48V1920 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |