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參數(shù)資料
| 型號(hào)： | MGFC47V5864 |
| 元件分類： | 功率晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-53, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 582K |
| 代理商： | MGFC47V5864 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC47V5864
5.8`6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC47V5864 device is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 ` 6.4GHz
band amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
P1dB = 47dBm (TYP.) @ f=5.8 ` 6.4 GHz
High power gain
GLP = 9.5 dB (TYP.) @ f=5.8 ` 6.4GHz
High power added efficiency
PAE = 35 % (TYP.) @ f=5.8 ` 6.4GHz
APPLICATION
Solid-state power amplifier for satellite earth-station
communication transmitter and VSAT
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 9.8 (A)
RG=10 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-20
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-10
V
with them. Trouble with semiconductors may lead to personal
IGR
Reverse gate current
-130
mA
injury, fire or property damage. Remember to give due
IGF
Forward gate current
168
mA
consideration to safety when making your circuit designs,
PT *1
Total power dissipation
166
W
with appropriate measures such as (1)placement of
Tch
Channel temperature
175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
Tstg
Storage temperature
-65 / +175
deg.C
material or (3)prevention against any malfunction or mishap.
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS (Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off) Pinch-off voltage
VDS = 3V , ID = 168mA
-1
-
-4
V
P1dB
46
47
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=9.8A, f=5.8 ` 6.4GHz
8.5
9.5
-
dB
ID
Drain Current
-
11
-
A
PAE
Power added efficiency
-
35
-
%
Rth(ch-c) Thermal resistance
*1 delta Vf method
-
0.8
0.9
deg.C/W
*1 : Channel-case
June/2004
Output power at 1dB gain
compression
MITSUBISHI
ELECTRIC
20.4+/-0.2
16.7
(3)
24+/-0.3
OUTLINE DRAWING
Unit : millimeters
2MIN.
GF-53
0.1+/-0.05
2
.3+
/-0.2
17.4+/-0.2
2.4
8.0+/-0.2
2MIN.
1.3
(1) : Gate
(2) : Source
(3) : Drain
4.7
ma
x.
0.7+/-0.15
15.8
(2)
(1)
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