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參數(shù)資料
| 型號： | MGFK30V4045 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, GF-11, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 249K |
| 代理商： | MGFK30V4045 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK30V4045
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFK30V4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0-14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally impedance matched
Flip-chip mounted
High output power
P1dB = 1.1W(TYP.) @f=14.0-14.5GHz
High linear power gain
GLP = 8.0dB(TYP.)
í @f=14.0-14.5GHz
High power added efficiency
íí íP.A.E.24èTYP.)íí@f=14.0-14.5GHz
APPLICATION
For use in 14.0-14.5GHz band amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS =8 (V)
ID =350 (mA)
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
< Keep safety first in your circuit designs! >
VGSO
Gate to source voltage
-15
V
Mitsubishi Electric Corporation puts the maximum effort into
ID
Drain current
1000
making semiconductor products better and more reliable,
IGR
Reverse gate current
-3
but there is always the possibility that trouble may occur
IGF
Forward gate current
5
with them.Trouble with semiconductors may lead to personal
PT *1
Total power dissipation
11
W
injury, fire or property damage. Remember to give due
Tch
Channel temperature
175
deg.C
consideration to safety when making your circuit designs,
Tstg
Storage temperature
-65 / +175
deg.C
with appropriate measures such as (1)placement of
*1 : Tc=25deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
800
1000
mA
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=2mA
-2
-
-5
V
gm
Transconductance
VDS=3V,ID=350mA
-
300
-
mS
P1dB
Output power at 1dB gain
compression
29.5
31
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=350mA, f=14.0 - 14.5GHz
7.0
8.0
-
dB
P.A.E.
Power added efficiency
-
24
-
%
Rth (Ch-C) Thermal resistance *1
Delta Vf method
-
20
deg.C/W
*1 : Channel to case
Jul-'05
MITSUBISHI
ELECTRIC
9.2 +/-0.2
6.2+/-0.2
0.
6
2.
4
+
/-0
.4
G F -11
9.0
(1 ) G AT E
(2 ) S O U RC E (F L AN G E )
(3 ) DR AIN
0.
1
1.
3
+
/-0
.2
Unit : millimeters
(3 )
11.0 +/-0.3
2M
IN
6.
5
+
/-0
.2
2M
IN
(2 )
O UTL INE D RA W ING
(1 )
0.5 +/-0.15
2R-0.9
(2 )
5.
1
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| MGFK30V4045_05 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET |
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| MGFK33V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:X/Ku band internally matched power GaAs FET |
| MGFK33V4045_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET |
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