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參數資料
| 型號： | MGFC45V4450A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 4.4 - 5.0GHz波段32W內部匹配砷化鎵場效應管 |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MGFC45V4450A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V4450A
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S
11
S
21
S
12
S
22
(GHz)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
4.4
0.58
-132
0.04
2
2.881
54
0.30
-56
4.5
0.59
-163
0.04
-21
2.936
31
0.23
-82
4.6
0.58
171
0.05
-52
2.865
8
0.16
-125
4.7
0.59
151
0.05
-67
2.782
-12
0.18
-170
4.8
0.56
134
0.05
-94
2.670
-32
0.24
160
4.9
0.54
120
0.05
-112
2.628
-51
0.32
138
5.0
0.50
111
0.06
-129
2.528
-70
0.38
125
MITSUBISHI
ELECTRIC
Feb. 1999
Po, P.A.E. vs. Pin
25
30
35
40
45
50
20
25
30
35
40
INPUT POWER Pin (dBm)
O
0
20
40
60
80
100
VDS=10V
IDS=8A
f=4.7GHz
Po
add
P
Po,IM3 vs. Pin
24
26
28
30
32
34
36
38
17
19
INPUT POWER Pin (dBm S.C.L.)
21
23
25
27
29
31
O
-70
-60
-50
-40
-30
-20
-10
0
VDS=10V
IDS=8A
f1=5.00GHz
f2=5.01GHz
2-tone test
IM3
Po
I
P1dB,GLP vs. f
41
42
43
44
45
46
47
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
FREQUENCY f (GHz)
O
8
10
12
14
16
18
20
L
VDS=10V
IDS=8A
P1dB
GLP
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
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相關代理商/技術參數 |
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| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5053A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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