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參數(shù)資料
| 型號： | MGFC45V6472A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 6.4 - 7.2GHz頻段32W內(nèi)部匹配砷化鎵場效應管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MGFC45V6472A |
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
.
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.)
@
f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.)
@
f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.)
@
f=6.4-7.2GHz
Low distortion [item -51]
IM3=-42dBc(min.) @Po=34.5dBm S.C.L.
Thermal Resistance
Rth(ch-c)=1.0 deg.C/W(MAX.)
APPLICATION
item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 8.0 A
RG=25 ohm
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
*1 : Tc=25 deg.C
Parameter
Ratings
-15
-15
30
-60
126
125
175
-65/+175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Channel temperature
Storage temperature
ELECTRICAL CARACTERISTICS
Symbol
(Ta=25 deg.C)
Test conditions
Parameter
Limits
Typ.
Unit
Min.
Max.
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
20
-
A
Gm
Transconductance
VDS=3V, ID=6.4A
-
8.0
-
V
VGS(off)
Gate to source cut-off voltage
Output power at 1dB gain
compression
GLP
Linear power gain
VDS = 3V , ID = 120mA
-
-
-5
V
P1dB
44.5
45
-
dBm
VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz
7
8
-
dB
PAE
Power added efficiency
-
35
-
%
IM3
3rd order IM distortion *1
-42
-45
-
dBc
Rth(ch-c) Thermal resistance *2
Delta Vf method
-
-
1.0
deg.C/W
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
24 +/- 0.3
16.7
20.4 +/- 0.2
OUTLINE DRAWING Unit:millimeters (inches)
GF-38
4
7
.
3
M
/
-
4
1
.
4
2
I
N
R1.2
8
.
0
+
/
-
0
.
2
1
+
/
-
0
2
2
M
I
N
(1)
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
(3)
0
.
1
+
-
.
0
5
2
.
4
+
/
-
.
0
(2)
0.6 +/- 0.15
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| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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| MGFC47A7785 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47B3538B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band Internally Matched Power GaAs FET |
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