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參數(shù)資料
| 型號(hào)： | MGFC45V3436A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 3.4 - 3.6GHz的波段32W內(nèi)部匹配砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 213K |
| 代理商： | MGFC45V3436A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3436A
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
S21
S12
S22
(GHz)
3.30
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
0.54
-95
3.01
104
0.03
43
0.60
13
3.35
0.51
-121
3.27
87
0.03
29
0.56
3
3.40
0.49
-146
3.45
73
0.04
13
0.50
-6
3.45
0.50
-171
3.58
59
0.04
-12
0.44
-17
3.50
0.51
165
3.71
42
0.05
-21
0.39
-29
3.55
0.53
144
3.80
27
0.06
-37
0.34
-42
3.60
0.55
125
3.82
14
0.06
-52
0.29
-56
3.65
0.56
0.56
110
93
3.81
3.84
-1
-15
0.06
0.07
-69
-80
0.24
0.22
-74
-94
3.70
Mar.'99
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
P1dB,GLP vs. f
40
41
42
43
44
45
46
47
3.3
3.4
3.5
3.6
3.7
FREQUENCY f (GHz)
O
9
10
11
12
13
14
15
16
VDS=10V
IDS=8.0A
P1dB
GLP
L
Po,IM3 vs. f
24
26
28
30
32
34
36
38
40
42
16
18
20
22
24
26
28
30
INPUT POWER Pin (dBm S.C.L.)
O
-70
-60
-50
-40
-30
-20
-10
0
10
20
IM3
Po
VDS=10V
IDS=8A
f1=3.600GHz
f2=3.605GHz
2-tone test
I
Po, P.A.E. vs. Pin
26
28
30
32
34
36
38
40
42
44
46
17
19
21
23
25
27
29
31
33
35
37
INPUT POWER Pin (dBm)
O
0
20
40
60
80
100
VDS=10V
IDS=8A
f=3.5GHz
Po
P.A.E.
P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGFC45V3642A | 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A | 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A | 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC47V5864 | 5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFK25V4045 | 14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC45V3436A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V3642A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V3642A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V4450A_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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