| 型號(hào): | MGFC38V5964 | 
| 廠商: | Mitsubishi Electric Corporation | 
| 英文描述: | RECTIFIER BRIDGE 10A 200V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX | 
| 中文描述: | 5.9 - 6.4GHz的頻段6W內(nèi)部匹配砷化鎵場(chǎng)效應(yīng)管 | 
| 文件頁(yè)數(shù): | 1/3頁(yè) | 
| 文件大小: | 262K | 
| 代理商: | MGFC38V5964 | 

相關(guān)PDF資料  | 
PDF描述  | 
|---|---|
| MGFC38V6472 | RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX | 
| MGFC39V5964 | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET | 
| MGFC39V5258 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x15 mm; Packaging: Bulk | 
| MGFC39V5964A | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET | 
| MGFC39V3436 | 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET | 
相關(guān)代理商/技術(shù)參數(shù)  | 
參數(shù)描述  | 
|---|---|
| MGFC38V5964_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET | 
| MGFC38V5964_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET | 
| MGFC38V6472 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET | 
| MGFC38V6472_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET | 
| MGFC38V6472_97 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET |