| 型號(hào): | MGFC39V5964A |
| 廠商: | Mitsubishi Electric Corporation |
| 英文描述: | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| 中文描述: | 5.9 - 6.4GHz的頻段8瓦特內(nèi)部匹配砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁數(shù): | 1/2頁 |
| 文件大?。?/td> | 99K |
| 代理商: | MGFC39V5964A |

相關(guān)PDF資料 |
PDF描述 |
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| MGFC40V4450A | 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET |
| MGFC40V7177A | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGFC39V5964A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V5964A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V6472A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
| MGFC39V6472A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET |
| MGFC39V6472A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |