| 型號(hào): | MGFC1801 | 
| 廠商: | Mitsubishi Electric Corporation | 
| 英文描述: | FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE | 
| 中文描述: | 用于微波低噪聲放大器,N溝道肖特基門式 | 
| 文件頁(yè)數(shù): | 2/6頁(yè) | 
| 文件大?。?/td> | 220K | 
| 代理商: | MGFC1801 | 

相關(guān)PDF資料  | 
PDF描述  | 
|---|---|
| MGFC38V5867 | 5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET | 
| MGFC38V5964 | RECTIFIER BRIDGE 10A 200V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX | 
| MGFC38V6472 | RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX | 
| MGFC39V5964 | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET | 
| MGFC39V5258 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x15 mm; Packaging: Bulk | 
相關(guān)代理商/技術(shù)參數(shù)  | 
參數(shù)描述  | 
|---|---|
| MGFC36V3436 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET | 
| MGFC36V3436_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET | 
| MGFC36V3436_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET | 
| MGFC36V3742A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET | 
| MGFC36V3742A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET |