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參數(shù)資料
| 型號： | MGF7168C |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | UHF BAND GaAs POWER AMPLIFIER |
| 中文描述： | 超高頻波段GaAs功率放大器 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 77K |
| 代理商： | MGF7168C |
MGF7168C
MITSUBISHI SEMICONDUCTOR<GaAsMMIC>
UHF BAND GaAs POWER AMPLIFIER
ELECTRICAL CHARACTERISTICS (Ta=25C)
Symbol
Pin
Idt
Parameter
Input power
Total drain current
MIN
TYP
MAX
Unit
dBm
Test conditions
frequency
1850
1910
MHz
Vd1=Vd2=3.2V,Po=33dBm
—
—
—
3
—
—
—
Limits
Ig
Gate current
—
—
—
Note1 : Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
mA
1250
mA
3
dBc
-30
Vd1=Vd2=3.2V,
Pin<10dBm,
Po=33dBm
2sp
2nd harmonics
ρ
in
input VSWR
Note1,2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
Vd1,Vd2
Vg1,Vg2
Pi
Tc(op)
Tstg
Drain voltage
Gate voltage
Input power
Operating case temperature
Storage temparature
6
-4
15
-30~+85
-30~+100
V
V
dBm
C
MITSUBISHI ELECTRIC
Note3 : Sampling inspection
Damage
with-standing
—
—
Stability
Vd1=Vd2=3.2V,
Pin<10dBm,
Load VSWR=10, All phase
Time=10 sec
No damage
No oscillation
Spurious level<-60dBc
Vd1=Vd2=3.2V,
Pin<10dBm,
Load VSWR=3:1, All phase
Note3
Note3
(2/12)
—
1710
1785
—
Note2 : GMSK Pulse operation
—
10
Mar.'97
C
—
f
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