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參數(shù)資料
| 型號(hào)： | MGF7168C |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | UHF BAND GaAs POWER AMPLIFIER |
| 中文描述： | 超高頻波段GaAs功率放大器 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | MGF7168C |
MGF7168C
MITSUBISHI SEMICONDUCTOR<GaAsMMIC>
Mar.'97
Technical Note
MITSUBISHI ELECTRIC
(1/12)
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MGF7168C is a monolithic microwave integrated
circuit for use in UHF-band power amplifier.
FEATURES
DESCRIPTION
- Low voltage operation
Vd=3.2V
- High output power
Po=33dBm (typ.) @1710~1785MHz
Po=33dBm (typ.) @1850~1910MHz
- High efficiency
Id=1250mA (typ. ) @Po=33dBm
- Small size
6.1x7.0x1.10mm
- Surface mount package
- 2 Stage Amplifier
- External matching circuit is required
- 1.8GHz band handheld phone
- 1.9GHz band handheld phone
APPLICATION
- GG
QUALITY GRADE
UHF BAND GaAs POWER AMPLIFIER
Specifications are subject to change without notice.
PIN CONFIGURATION (TOP VIEW)
Pin
Pout
Vd1
Vd2
Vg1
Vg2
GND
CASE
R
: RF input (Note1)
: RF output (Note1)
: Drain bias 1
: Drain bias 2
: Gate bias 1
: Gate bias 2
: Connect to GND
: Connect to GND
: Connect to GND through
the resistor
Note1: Connect to matching circuits.
GND
Vd2 / Po
Vg1
Vg2
Pi
Vd1
GND
R
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| MGF7169C | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:UHF BAND GaAs POWER AMPLIFIER |
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