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參數(shù)資料
| 型號： | MGF7124A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1.9GHz BAND AMPLIFIER MMIC |
| 中文描述： | 單片1.9GHz頻帶功率放大器 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 9K |
| 代理商： | MGF7124A |
MGF7124A
MITSUBISHI SEMICONDUCTOR GaAs MMIC
1.9GHz BAND AMPLIFIER MMIC
Nov. ′97
DESCRIPTION
MGF7124A is a monolithic microwave integrated circuit for use in
1.9GHz band power amplifiers.
FEATURES
High output power
P
O
=26dBm,
π
/4DQPSK
Small size
5.8
×
12.2
×
1.8mm
Light weight
Surface mount package
Low supply voltage operation
V
D
=4.8V
Enable to control gain
V
Gdual
=0/-4V
APPLICATION
Base-station of Japanese personal handyphone system(PHS)
QUALITY GRADE
IG
OUTLINE DRAWING
Unit:millimeters
GC-3
: RF INPUT
: 1st DRAIN BIAS
: 2nd DRAIN BIAS
: GND
P
i
V
D1
V
D2
GND
: 1st GATE BIAS
: 2nd GATE BIAS
: GAIN CONTROL
: RF OUTPUT
V
G1
V
G2
V
Gdual
P
O
Typ
–
Max
1.92
5.2
Min
1.89
4.8
21
–
20
Limits
Parameter
Test conditions
(Note1)
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
f
V
D
G
P
I
Dt
G
con
A.C.P
(±600kHz)
Power gain
Total drain current
Gain control range
Note1: Z
S
=Z
L
=50
,I
Dt
-bias=I
D1
+I
D2
=280mA
–
–
–
GHz
V
dB
mA
dB
P
O
=26dBm,f(ACP)=±600kHz,
f=1.9GHz,
π
/4DQPSK
P
O
=26dBm,f(ACP)=±900kHz,
f=1.9GHz,
π
/4DQPSK
–
–
5.0
dBc
dBc
Frequency
Drain supply voltage
Adjacent channel power
-56
-62
300
–
–
–
–
ABSOLUTE MAXIMUM RATINGS
Symbol
V
D1,
V
D2
V
G1,
V
G2,
V
Gdual
I
D1,
I
D2,
I
D3
Drain current
Parameter
Ratings
5.5
-20 to +90
-35 to +120
P
i
T
C
(op)
T
stg
Unit
V
Drain voltage
Gate voltage
Input power
Operating case temperature
Storage temperature
-5.5
10
V
dBm
C
C
500
mA
A.C.P
(±900kHz)
P
O
=26dBm,f=1.9GHz,
π
/4DQPSK
V
Gdual
=0/-4V,P
O
=26dBm,f=1.9GHz
1
2
3
4
8
7
6
5
8.4
12.2
P
i
V
D1
NU
V
D2
V
G1
V
Gdual
V
G2
Po
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