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參數(shù)資料
| 型號： | MGF4934CM |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KU BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | GD-30, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 114K |
| 代理商： | MGF4934CM |
Apr./2008
MITSUBISHI SEMICONDUTOR
<GaAs FET>
MGF4934CM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
MITSUBISHI
(1/5)
DESCRIPTION
The MGF4934CM super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain
@ f=12GHz
Gs = 13.0dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
3000pcs/reel
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-3
V
VGSO
Gate to source voltage
-3
V
ID
Drain current
IDSS
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-55 to +125
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C )
Symbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
IG=-10A
-3.5
--
V
IGSS
Gate to source leakage current
VGS=-2V,VDS=0V
--
50
A
IDSS
Saturated drain current
VGS=0V,VDS=2V
12
--
60
mA
VGS(off)
Gate to source cut-off voltage
VDS=2V,ID=500A
-0.1
--
-1.5
V
Gs
Associated gain
VDS=2V,
11.5
13.0
--
dB
NFmin.
Minimum noise figure
ID=10mA,f=12GHz
--
0.50
0.75
dB
Outline Drawing
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making
semiconductor products better and more reliable , but there is always the
possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury , fire or property damage. Remember to give due
consideration to safety when making your circuit designs , with appropriate
measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
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| MGF4935AM | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) |
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