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參數(shù)資料
| 型號： | MGF4941CL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | K BAND, GaAs, P-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, GD-32, MICRO-X-4 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 113K |
| 代理商： | MGF4941CL |
Publication Date : Apr., 2011
1
PRELIMINARY
< Low Noise GaAs HEMT >
MGF4941CL
Micro-X type plastic package
DESCRIPTION
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
FEATURES
Low noise figure
@ f=25.2GHz
NFmin. = 2.4dB (Typ.)
High associated gain
@ f=25.2GHz
Gs = 10.0dB (Typ.)
APPLICATION
K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=1.5V, VGS=0V
ORDERRING INFORMATION
Tape & reel
4000pcs./reel
RoHS COMPLIANT
MGF4941CL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Ta=25
C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-3
V
VGSO
Gate to source voltage
-3
V
ID
Drain current
55
mA
PT
Total power dissipation
75
mW
Tch
Channel temperature
125
C
Tstg
Storage temperature
-55 to +125
C
ELECTRICAL CHARACTERISTICS
(Ta=25
C )
Symbol
Parameter
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
Gate to drain breakdown voltage
IG=-10A
-3
--
V
IGSS
Gate to source leakage current
VGS=-2V,VDS=0V
--
50
A
IDSS
Saturated drain current
VGS=0V,VDS=1.5V
15
--
60
mA
VGS(off)
Gate to source cut-off voltage
VDS=1.5V,ID=500A
-0.1
--
-1.5
V
Gs
Associated gain
VDS=1.5V,
7.5
10.0
--
dB
NFmin.
Minimum noise figure
VGS=0V,f=25.2GHz
--
2.4
3.8
dB
Note: Gs and NFmin. are tested with sampling inspection.
Outline Drawing
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
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