參數(shù)資料
型號(hào): MGC15N35CL
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Internally Clamped N-Channel IGBT
中文描述: 15 A, 380 V, N-CHANNEL IGBT
封裝: DIE
文件頁數(shù): 6/8頁
文件大?。?/td> 99K
代理商: MGC15N35CL
MGP15N35CL, MGB15N35CL, MGC15N35CL
http://onsemi.com
6
PACKAGE DIMENSIONS
TO–220
CASE 221A–09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
MIN
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
0.080
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
2.04
MILLIMETERS
INCHES
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
–T–
C
S
T
U
R
J
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D2PAK
CASE 418B–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
S
G
D
0.13 (0.005)
–T–
M
T
2
3
1
4
3 PL
K
J
H
V
E
C
A
DIM
A
B
C
D
E
G
H
J
K
S
V
MIN
0.340
0.380
0.160
0.020
0.045
0.100 BSC
0.080
0.018
0.090
0.575
0.045
MAX
0.380
0.405
0.190
0.035
0.055
MIN
8.64
9.65
4.06
0.51
1.14
2.54 BSC
2.03
0.46
2.29
14.60
1.14
MAX
9.65
10.29
4.83
0.89
1.40
MILLIMETERS
INCHES
0.110
0.025
0.110
0.625
0.055
2.79
0.64
2.79
15.88
1.40
–B–
M
B
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
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