
Semiconductor Components Industries, LLC, 2001
November, 2001– Rev. 4
1
Publication Order Number:
MGP15N43CL/D
MGP15N43CL,
MGB15N43CL
Preferred Device
Ignition IGBT
15 Amps, 430 Volts
N–Channel TO–220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
460
VDC
Collector–Gate Voltage
VCER
460
VDC
Gate–Emitter Voltage
VGE
22
VDC
Collector Current–Continuous
@ TC = 25°C
IC
15
ADC
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
136
1.0
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE
CHARACTERISTICS (TJ t150°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector–to–Emitter
Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL =
14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL =
10 A, L = 3 mH, Starting TJ = 150°C
EAS
300
150
mJ
Device
Package
Shipping
ORDERING INFORMATION
MGP15N43CL
TO–220
50 Units/Rail
MGB15N43CLT4
D2PAK
800 Tape & Reel
C
E
G
15 AMPERES
430 VOLTS (Clamped)
VCE(on) = 1.8 m
TO–220AB
CASE 221A
STYLE 9
1
2
3
4
http://onsemi.com
N–Channel
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N43CL
= Device Code
Y
= Year
WW
= Work Week
G15N43CL
YWW
1
Gate
3
Emitter
4
Collector
2
Collector
G15N43CL
YWW
1
Anode
3
Anode
4
Cathode
2
Cathode
1
2
3
4
D2PAK
CASE 418B
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.