- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182058 > MGF0909A S BAND, GaAs, N-CHANNEL, RF POWER, JFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MGF0909A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, GF-7, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | MGF0909A |
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
High power gain
GLp=11.0dB(TYP.)
@f=2.3GHz
High power added efficiency
ηadd=45%(TYP.)
@f=2.3GHz,P1dB
Hermetic Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=1.3A
Rg=100
Absolute maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
5
A
IGR
Reverse gate current
-15
mA
IGF
Forward gate current
31.5
mA
PT
Total power dissipation
27.3
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
(Ta=25
°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
--
5.0
A
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=10mA
-2.0
-
-5.0
V
gm
Transconductance
VDS=3V,ID=1.3A
-
1.5
-
S
P1dB
Output power 1dB Compression P
VDS=10V,ID=1.3A,f=2.3GHz
37.0
38.0
-
dBm
ηadd
Power added Efficiency
*1
*1:Po=P1dB
-
45
-
%
GLP
Linear Power Gain
*2
*2:Pi=22dBm
10.0
11.0
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
9
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.65
GF-7
1.65
0.1
14.0
9.0}0.2
B
5.0
1.9}0.4
OUTLINE DRAWING
A
2.2
0.6}0.2
A
Unit : millimeters
@
2MIN
4.4+0/-0.3
2MIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGF0912A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0919A-01 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF0919A | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF0919A-03 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGF1902B | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGF0909A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0909A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET(small signal gain stage) |
| MGF0910A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0910A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0910A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。