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參數(shù)資料
| 型號(hào)： | MGB15N40CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 440 V, N-CHANNEL IGBT |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 100K |
| 代理商： | MGB15N40CLT4 |
MGP15N40CL, MGB15N40CL, MGC15N40CL
http://onsemi.com
4
2.5
2.0
0.0
–50
–25
0
25
50
75
100
125
150
1.5
1.0
0.5
Tj = 25
°
C
45
IC
40
35
30
25
20
15
10
5
00
1
2
3
4
5
6
7
8
45
40
35
30
25
20
15
10
5
00
1
2
3
4
5
6
7
8
30
25
20
15
10
5
00
0.5
1
1.5
2
2.5
3
3.5
4
2.0
1.8
1.3
1.0
0.8
0.0
–50
–25
0
25
50
75
100
125
150
4.5
5
0.5
0.3
10000
1000
100
10
1
0
20
40
60
80
100
120
140 160
180
200
VC
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
IC
C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.0 V
VGE = 3.0 V
Tj = 150
°
C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.0 V
VGE = 3.0 V
VCE = 10 V
Tj = 150
°
C
Tj = 25
°
C
Tj = 40
°
C
VGE = 15 V
IC = 5 A
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
CRSS
CISS
COSS
Mean + 4
σ
Mean
IC = 1 mA
IC
T
IC = 15 A
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Tj, JUNCTION TEMPERATURE (
°
C)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (
°
C)
1.5
IC = 10 A
Mean – 4
σ
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation Voltage
versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage versus Temperature
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