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參數(shù)資料
| 型號(hào)： | MGP15N43CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Internally Clamped N-Channel IGBT |
| 中文描述： | 15 A, 460 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 70K |
| 代理商： | MGP15N43CL |
1
Motorola, Inc. 1998
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate Collector Over–
Voltage Protection from monolithic circuitry for usage as an Ignition
Coil Driver.
Temperature Compensated Gate – Collector Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCER
VGE
IC
PD
CLAMPED
Vdc
Collector–Gate Voltage
CLAMPED
Vdc
Gate–Emitter Voltage
CLAMPED
Vdc
Collector Current — Continuous
15
Adc
Total Power Dissipation
Derate above 25
°
C
136
0.91
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to 175
°
C
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE CHARACTERISTICS (TJ < 150
°
C)
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25
°
C
VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150
°
C
EAS
300
150
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case
Thermal Resistance
— Junction–to–Ambient
R
θ
JC
R
θ
JA
1.1
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGP15N43CL/D
SEMICONDUCTOR TECHNICAL DATA
15 AMPERES
N–CHANNEL IGBT
VCE(on) = 1.8 V
430 VOLTS
CLAMPED
CASE 221A–09
STYLE 9
TO–220AB
G
C
E
C
E
G
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