參數(shù)資料
型號(hào)： MGB15N38CL
廠商： ON SEMICONDUCTOR
英文描述： Ignition IGBT 15 Amps, 380 Volts(15A，380V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（D2PAK封裝）)
中文描述： 點(diǎn)火IGBT15安培，380伏特，（15A條，380v整機(jī)鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（采用D2PAK封裝））
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 41K
代理商： MGB15N38CL
MGP15N38CL, MGB15N38CL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
(IC = 1.0 mA, TJ = –40
°
C to 175
°
C)
V(BR)CES
350
380
410
Vdc
Zero Gate Voltage Collector Current
(VCE = 300 V, VGE = 0 V)
(VCE = 300 V, VGE = 0 V, TJ = 150
°
C)
ICES
–
–
–
–
10
150
μ
Adc
Gate–Emitter Clamp Voltage
(IG = 5.0 mA)
V(BR)GES
17
–
22
Vdc
Gate–Emitter Leakage Current
(VGE = 10 V)
IGES
–
–
10
μ
Adc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage
(VGE = VCE, IC = 1.0 mA)
Threshold Temperature Coefficient (Negative)
VGE(th)
1.3
–
1.8
4.4
2.1
–
Vdc
mV/
°
C
Collector–to–Emitter On–Voltage
(VGE = 3.5 V, IC = 6.0 A)
(VGE = 4.0 V, IC = 10 A, TJ = 150
°
C)
VCE(on)
–
–
–
–
2.0
1.8
Volts
Forward Transconductance
(VCE = 5.0 V, IC = 10 A)
gfe
8.0
19
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCC = 15 V, VGE = 0 V,
f = 1.0 MHz)
15 V V
Cies
Coes
Cres
–
TBD
–
pF
Output Capacitance
–
TBD
–
Transfer Capacitance
–
TBD
–
SWITCHING CHARACTERISTICS
(Note 1.)
Turn–Off Delay Time
(VCC = 300 V, IC = 6.5 A,
(VCC 300 V, IC 6.5 A,
RG = 1.0 k
, L = 300 H)
td(off)
tf
td(on)
tr
–
TBD
–
Sec
Fall Time
–
TBD
–
Turn–On Delay Time
(VCC = 10 V, IC = 6.5 A,
(VCC 10 V, IC 6.5 A,
RG = 1.0 k
,
RL = 1.0
)
–
TBD
–
Sec
Rise Time
–
TBD
–
Gate Charge
(VCC = 300 V, IC = 15 A,
VGE = 5.0 V)
300 V I
QT
Q1
Q2
–
TBD
–
nC
–
TBD
–
–
TBD
–
1. Pulse Test: Pulse Width
≤
300
μ
S, Duty Cycle
≤
2%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGB15N40CL 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK
MGB15N40CLT4 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
MGB19N35CL 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
MGB19N35CLT4 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
MGB20 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP
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