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參數(shù)資料
| 型號(hào)： | MGB15N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Ignition IGBT 15 Amps, 350 Volts(15A，350V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（D2PAK封裝）) |
| 中文描述： | 點(diǎn)火IGBT15安培，350伏特，（第15A，350V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（采用D2PAK封裝）） |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | MGB15N35CL |
MGP15N35CL, MGB15N35CL
http://onsemi.com
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGB15N38CL | Ignition IGBT 15 Amps, 380 Volts(15A，380V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGB15N40CL | Ignition IGBT 15 Amps, 410 Volts(15A，410V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGB19N35CL | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGP19N35CL | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點(diǎn)火絕緣柵雙極型晶體管（TO-220封裝）) |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGB15N35CLT4 | 功能描述:IGBT 晶體管 15A 350V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB15N40CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
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