參數(shù)資料
型號: MG150J7KS50
廠商: Toshiba Corporation
英文描述: TOSHIBA GTR Module Silicon N Channel IGBT
中文描述: 東芝滋養(yǎng)模塊IGBT的硅?頻道
文件頁數(shù): 2/6頁
文件大小: 119K
代理商: MG150J7KS50
MG150J7KS50
2001-08-16
2
Inverter Stage
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V
CES
600
V
Gate-emitter voltage
V
GES
±20
V
DC
I
C
150
Collector current
1ms
I
CP
300
A
DC
I
F
150
Forward current
1ms
I
FM
300
A
Collector power dissipation (Tc = 25°C)
P
C
320
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
40 ~ 125
°C
Isolation voltage
V
Isol
2500
(AC 1 min.)
V
Screw torque (Terminal / mounting)
3 / 3
N·m
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GES
V
GE
= ±20V, V
CE
= 0
±500
nA
Collector-emitter cut-off current
I
CES
V
CE
= 600V, V
GE
= 0
1.0
mA
Gate-emitter cut-off voltage
V
GE (off)
V
CE
= 5V, I
C
= 15mA,
5.0
8.0
V
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 150A, V
GE
= 15V
2.2
2.8
V
Input capacitance
C
ies
V
CE
= 10V, V
GE
= 0V,
f = 1MHz
12.0
nF
Forward voltage
V
F
I
F
= 150A
2.5
3.5
V
Rise time
t
r
0.15
0.3
Turn-on time
t
on
0.23
0.46
Fall time
t
f
0.25
0.50
Turn-off time
t
off
0.50
1.00
Switching time
Reverse recovery time
trr
Inductive load
V
CC
= 300V
I
C
= 150A
V
GE
= ±15V
R
G
= 9.2
(Note 1)
0.15
0.30
μs
Transistor stage
0.39
R
th (j-c)
Diode stage
1.00
Thermal resistance
R
th (c-f)
Case to fin
(Note 2)
0.05
°C / W
Note 2: Silicone grease is applied.
相關(guān)PDF資料
PDF描述
MG150Q1JS40 Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
MG150Q2YS51 8-Port Wireless Switch; Approval Categories:UL, EN & IEC: 60950-I; EMC FCC Part 15 Class B, EN 300386; Data Rate Max:54Mbps; External Depth:9.4"; External Height:1.89"; External Width:16.9" RoHS Compliant: Yes
MG150Q2YK1 TRANSISTOR MODULES
MG150Q2YL1 TRANSISTOR MODULES
MG15C4MNI OUT LINE BQUIVALRN CIRCUIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MG150J7KS60 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
MG150J7KS61 功能描述:IGBT MOD CMPCT 600V 150A RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:IGBTMOD™ 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
MG150M2YK1 制造商:n/a 功能描述:IGBT Module
MG150M2YL1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MODULES
MG150N2YK1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MODULES