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參數(shù)資料
| 型號： | MG1009-11 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| 封裝： | CERAMIC, ROHS COMPLIANT, M11 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 204K |
| 代理商： | MG1009-11 |
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Discrete Frequency: Cathode Heatsink
Features
●
CW Designs to 500 mW
●
Pulsed Designs to 10 W
●
Frequency Coverage Specified from 5.9–95 GHz
●
Low Phase Noise
●
High Reliability
Applications
●
Motion Detectors
●
Transmitters and Receivers
●
Beacons
●
Automotive Collision Avoidance Radars
●
Radars
●
Radiometers
●
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
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