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參數(shù)資料
| 型號： | MG1044-11 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE |
| 封裝： | CERAMIC, ROHS COMPLIANT, M11 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 169K |
| 代理商： | MG1044-11 |
MG1041 – MG1059
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
Copyright
2008
Rev: 2009-01-19
GUNN Diodes
Anode Heat Sink
TM
Features
●
High Reliability
●
Low-Phase Noise
●
9.5–35.5 GHz Operation
●
Pulsed and CW Designs to 20 mW
Applications
●
Motion Detectors
●
Transmitters and Receivers
●
Beacons
●
Automotive Collision Avoidance Radars
●
Radars
●
Radiometers
●
Instrumentation
Description
Microsemi’s
GaAs
Gunn
diodes,
epi-up
(anode
heatsink), are fabricated from epitaxial layers grown
at MSC by the Vapor Phase Epitaxy technique. The
layers are processed using proprietary techniques
resulting in ultra- low phase and 1/f noise. The diodes
are available in a variety of microwave ceramic
packages for operation from 9.5–35.5 GHz.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MG1058-11 | 23 GHz - 25 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| MGR1605-BP | 16 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MGR1604-BP | 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MGR1601-BP | 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC |
| MGS905 | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG1045-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Anode Heat Sink |
| MG1046-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Anode Heat Sink |
| MG1052-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Anode Heat Sink |
| MG1052-30 | 制造商:Microsemi Corporation 功能描述:RF GUNN DIODE |
| MG1054-11 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Anode Heat Sink |
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