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參數(shù)資料
| 型號： | MF88M1-GNCAVXX |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8/16-bit Data Bus Flash Memory Card |
| 中文描述： | 16位產(chǎn)品數(shù)據(jù)總線閃存卡 |
| 文件頁數(shù)： | 16/22頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MF88M1-GNCAVXX |
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MITSUBISHI
ELECTRIC
16/22
Feb.1999 Rev2.0
SWITCHING CHARACTERISTICS (COMMON MEMORY)
(Ta= 0 to 55°C, Vcc=5V+/-5% )
Limits
Typ.
Min.
150
Max.
tcR
ta(A)
ta(CE)
ta(OE)
tdis(CE)
tdis(OE)
ten(CE)
ten(OE)
tv(A)
Read cycle time
Address access time
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
ns
ns
ns
ns
ns
ns
ns
ns
ns
150
150
75
75
75
5
5
0
TIMING REQUIREMENTS (COMMON MEMORY)
(Ta= 0 to 55°C, Vcc=5V+/-5% )
Limits
Typ.
Min.
150
Max.
tcW
t
SU
(A)
trec(WE)
tsu(D-WEH)
th(D)
t
WRR
tsu(A-WEH)
tsu(CE)
th(CE)
tw(WE)
t
WPH
t
DP
t
DE
Note 11 : Refer to switching characteristics for read parameters
Write cycle time
Address setup time
Write recovery time
Data setup time
Data hold time
Write recovery time before read
Address setup time to write enable high
Card enable setup time
Card enable hold time
Write pulse width
Write pulse width high
Duration of programming operation
Duration of erase operation
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
ms
20
20
50
20
0
100
20
20
80
40
6.5
900
TIMING DIAGRAM
Common Memory Read
V
IH
Unit
Symbol
Parameter
Symbol
Unit
Parameter
t
dis
(CE)
ta(OE)
tcR
t
a
(A)
ta(CE)
ten(CE)
ten(OE)
tdis(OE)
t
V
(A)
OUTPUT VALID
High-Z
An
Dm
(D
OUT
)
V
OH
V
OL
CE#
V
IH
V
IL
V
IL
OE#
V
IH
V
IL
WE# =“H” level, REG# =”H” level
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