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參數(shù)資料
| 型號(hào)： | MF88M1-GNCAVXX |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8/16-bit Data Bus Flash Memory Card |
| 中文描述： | 16位產(chǎn)品數(shù)據(jù)總線閃存卡 |
| 文件頁(yè)數(shù)： | 15/22頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | MF88M1-GNCAVXX |
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MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
MITSUBISHI
ELECTRIC
15/22
Feb.1999 Rev2.0
RECOMMENDED OPERATING CONDITIONS
(Ta=0 to 55°C, unless otherwise noted)
Limits
Typ.
Min.
4.75
Max.
V
CC
V
IH
V
IL
V
CC
Supply voltage
High input voltage
Low input voltage
Number of simultaneous activated
memory zones/blocks
5.0
5.25
V
CC
0.8
V
V
V
2.4
0
Programme
Erase
1
1
Zone
Block
CAPACITANCE
Limits
Typ.
Min.
Max.
45
45
C
i
C
o
Note 9 : These parameters are not 100% tested.
Input capacitance
Output capacitance
V
I
=GND, v
i
=25mVrms, f=1 MH
Z
, Ta=25°C
V
I
=GND, v
o
=25mVrms, f=1 MH
Z
, Ta=25°C
pF
pF
ELECTRICAL CHARACTERISTICS
Ta= 0 to 55°C, VCC=5V+/-5%, unless otherwise noted)
Limits
Typ.
Min.
2.4
2.4
0
Max.
I
OH
=-0.1mA, BVDn
I
OH
=-1.0mA, Other outputs
I
OL=
2mA
V
I
=V
CC
V
CE1#, CE2#, OE#, WE#, REG#
Other inputs
V
OL
I
IH
Low output voltage
High input current
0.4
10
-70
-10
10
V
μA
-10
High output current
in off state
Low output current
in off state
Active V
CC
supply
current 1
Active V
CC
supply
current 2
-10
CE1#=CE2#=V
IL
, Other inputs=V
IH
or V
IL
,
Outputs=open
CE1#=CE2# < 0.2V, Other inputs < 0.2V
or > V
CC
-0.2V, Outputs=open
2MB
4MB
8MB
16MB
20MB
32MB
2MB
4MB
8MB
16MB
20MB
32MB
6.0
6.0
10
18
22
34
1.2
1.4
1.8
1.8
2.0
2.6
I
CC
2
1
Standby V
CC
supply current 1
CE1#=CE2#=V
IH
, Other
inputs=V
IH
or V
IL
mA
0.05
0.05
0.10
0.20
0.25
0.40
I
CC
2
2
Standby V
CC
supply
current 2
CE1#=CE2# > V
CC
-0.2V,
Other inputs < 0.2V
or > V
CC
-0.2V
μA
Note 10 : Currents flowing into the card are taken as positive (unsigned).
Typical values are measured at V
CC
=5.0V,Ta=25°C.
The card consumes active current at programming, erasure even if both CE1# and CE2# are
high level.
Symbol
Conditions
Parameter
V
OH
Low output voltage
I
IL
V
I
=0V
High output current
CE1#=CE2#=V
IH
or OE#=V
IH
,V
O
(Dm)=V
CC
I
OZH
Symbol
CE1#=CE2#=V
IH
or OE#=V
IH
, V
O
(Dm)=0V
Parameter
I
OZL
Test conditions
130
N
ACT
I
CC
1
1
Symbol
200
Parameter
Unit
110
I
CC
1
2
180
Unit
V
μA
μA
μA
mA
mA
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