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參數(shù)資料
| 型號： | MDS350L |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 55KT, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MDS350L |
R.3.A.992605-HERIC
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
MDS350L
350 Watts, 45 Volts, Pulsed
Avionics 1030 - 1090 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The MDS350L is a high power COMMON BASE bipolar transistor.
It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces junction
temperature, extends life.
CASE OUTLINE
55KT Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
°C
583 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)55 V
Emitter to Base Voltage (BVebo)3.5 V
Collector Current (Ic)30 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Power Out
F
= 1090 MHz
350
W
Pin
Power Input
Vcc = 45 Volts
55
W
Pg
Power Gain
PW = Note 1
8
dB
η
c
Collector Efficiency
DF =
Note 1
47
%
VSWR
Load Mismatch Tolerance
F = 1030 MHz
2:1
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
BVebo
Emitter to Base Breakdown
Ie = 50 mA
3.5
V
BVces
Collector to Emitter Breakdown
Ic = 100 mA
55
V
hFE
DC – Current Gain
Vce = 5V, Ic = 2A
20
θjc2
Thermal Resistance
0.3
°C/W
NOTE 1: 250
s at 10% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
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