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參數(shù)資料
| 型號： | MDS800 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 55ST, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | MDS800 |
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
MDS800
800 Watts, 50 Volts
Pulsed Avionics at 1090 MHz
GENERAL DESCRIPTION
The MDS800 is a high power COMMON BASE bipolar transistor.
It is
designed for pulsed systems at 1090 MHz, with the pulse width and duty
required for MODE-S applications. The device has gold thin-film metalization
and emitter ballasting for proven highest MTTF. The transistor includes input
and output prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55ST-1
(Common Base)
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25
°C1
1458 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)
60 V
Emitter to Base Voltage (BVebo)
3.5 V
Collector Current (Ic)
60 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Power Output
F = 1090 MHz
800
W
Pin
Power Input
Vcc = 50 Volts
110
Pg
Power Gain
Burst width = 128s
8.6
dB
η
c
Collector Efficiency
LTDF = 2%
40
%
RL
Return Loss
-12
dB
Pd
Power Droop
0.5
dB
VSWR
Load Mismatch Tolerance
1
F = 1090 MHz
4.0:1
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
BVebo
Emitter to Base Breakdown
Ie = 30 mA
3.5
V
BVces
Collector to Emitter Breakdown
Ic = 50 mA
65
V
hFE
DC – Current Gain
Vce = 5V, Ic = 1A
20
θjc1
Thermal Resistance
0.12
°C/W
NOTES:
1. At rated output power and pulse conditions
2. 128 s burst, 0.5 s on/0.5 s off, 6.4 ms period
Rev. B– Dec 2005
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