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參數(shù)資料
| 型號(hào)： | MCZ33927EK |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Transistor; Type: Amplifiers/Bipolar; VCEO (V): -100; Ic (A): -1; Pc (W): 0.9; hFE: 140 to 350; VCE (sat) (V) max: -0.5; Package: TO-92Mod |
| 中文描述： | 三相場(chǎng)效應(yīng)晶體管預(yù)驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 10/44頁(yè) |
| 文件大小： | 490K |
| 代理商： | MCZ33927EK |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
10
33927
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
OVERCURRENT COMPARATOR
Common Mode Input Range
V
CM
V
OS_OC
V
OC_HYST
2.0
–
V
DD
-0.02
50
V
Input Offset Voltage
Overcurrent Comparator Threshold Hysteresis
(19)
-50
–
mV
50
300
mV
Output Voltage
High-Level at I
OH
= -500μA
Low-Level at I
OL
= 500μA
V
OH
V
OL
0.85 V
DD
–
–
–
V
DD
0.5
V
HOLD OFF CIRCUIT
V
DD
Threshold (V
DD
Falling)
RST pin High
V
DD_TH
1.5
–
4.0
V
Hold Off Current (At Each GATE Pin)
3.0V < V
BAT
< 40V
(20)
I
HOLD
10
–
300
μA
PHASE COMPARATOR
High-Level Input Voltage Threshold
V
IH_TH
V
IL_TH
V
OH
V
OL
R
IN
0.5 V
BAT
0.3 V
BAT
0.85 V
DD
–
–
0.65 V
BAT
0.45 V
V
DD
0.5
V
Low-Level Input Voltage Threshold
–
V
High-Level Output Voltage at I
OH
= -500μA
Low-Level Output Voltage at I
OL
= 500μA
High-Side Source Input Resistance
(19)
,
(23)
–
V
–
V
–
50
–
k
DESATURATION DETECTOR
Desaturation Detector Threshold
(21)
V
DES_TH
1.2
1.4
1.6
V
CURRENT SENSE AMPLIFIER
Recommended External Series Resistor (See
Figure 9
)
R
S
R
FB
–
1.0
–
k
Recommended External Feedback Resistor (See
Figure 9
)
Limited by the Output Voltage Dynamic Range
5.0
–
15
k
Maximum Input Differential Voltage (See
Figure 9
)
V
ID
= V
AMP_P
- V
AMP_N
Input Common Mode Range
(19)
,
(22)
V
ID
-800
–
+800
mV
V
C
Μ
V
OS
0
–
3.0
V
Input Offset Voltage
R
S
= 1k
, V
CM
= 0.0V
Input Offset Voltage Drift
(19)
-15
–
+15
mV
δ
V
OS
/
δ
T
I
b
–
-10
–
μV/°C
Input Bias Current
V
CM
= 2.0V
-200
–
+200
nA
Notes
19.
20.
This parameter is a design characteristic, not production tested.
The hold off circuit is designed to operate over the full operating range of V
BAT
. The specification indicates the conditions used in
production test.
Desaturation is measured as the voltage drop below V
BAT
, thus the threshold is compared to the drain-source voltage of the external
high-side FET. See
Figure 5
.
As long as one input is within V
CM
the output is guaranteed to have the correct phase. Exceeding the common mode rails will not cause
a phase inversion on the output.
Input resistance is impedance from high-side source and is referenced to ground. Approximate tolerance is
±20%.
21.
22.
23.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 8.0V
≤
V
PWR
= V
BAT
≤
40V
,
-40
°
C
≤
T
A
≤
125
°
C, unless otherwise noted. Typical
values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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