參數(shù)資料
型號: MCZ33800EK
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: Engine Control Integrated Circuit
中文描述: 發(fā)動機控制集成電路
文件頁數(shù): 10/39頁
文件大?。?/td> 461K
代理商: MCZ33800EK
Analog Integrated Circuit Device Data
Freescale Semiconductor
10
33800
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
SPI DIGITAL INTERFACE (SO, SI, CS, SCLK) (CONTINUED)
Sleep Mode EN and DEFAULT Input Current
V
D D
= 0.0V, V
EN
= 5.0V, V
D E FA U LT
= 5.0V
I
LOG
ICSS
-10
10
μ
A
Normal Mode Input Logic Pull-down Current
(9)
0.8V to 5.0V
I
LO
GICPD
5.0
15
25
μ
A
Normal Mode DEFAULT Pull-up Current
I
DEFAULTPU
-5.0
-25
μ
A
SCLK, Tri-state SO Output
0.0V to 5.0V
I
SCLK,
I
TRISO
-10
10
μ
A
CS
Input Current
CS
= V
DD
I
CS
-10
10
μ
A
CS
Pull-up Current
CS
= 0.0V
I
C
SPU
-5.0
-30
μ
A
CS
Leakage Current to V
DD
CS
= 5.0V, V
DD
= 0.0V
I
CS(LKG)
10
μ
A
SO High-state Output Voltage
I
SOHIGH
= -1.0mA
V
SOHIGH
V
DD
- 0.4
V
SO Low-state Output Voltage
I
SOLOW
= 1.0mA
V
SOLOW
0.4
V
EN Input Pull-down Current
EN = V
DD
I
ENPD
10
50
100
μ
A
PREDRIVER OUTPUT FUNCTION (GD1 - GD6)
Gate Drive Output Voltage
I
GATEDRIVE
= 100
μ
A
I
GATEDRIVE
= - 100
μ
A
V
GS (ON)
V
GS (OFF)
5.0
7.0
0.2
9.0
0.5
V
Gate Drive Sink and Source Current
I
GATEDRIVE
2.0
5.0
mA
Sleep Mode Gate to Source Resistor
R
GS (PULLDOWN)
65
200
300
K
Short Fault Detection Voltage Threshold
V
DD
= High, Outputs Programmed ON
Programmable from 0.5V to 3.0V in 0.5V increments.
V
DS(FLTTH)
-20%
+20%
V
Open Fault Detection Voltage Threshold
V
DD
= High, Outputs Programmed OFF
V
DS(FLTTH)
2.0
2.5
3.0
V
Notes
9.
Parameter applies to P1, P3, P5, P7, PWM1 to PWM6, SI and VCAL, and are guaranteed by design.
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 3.0V
V
DD
5.5V, 9.0V
V
PWR
18V, - 40
°
C
T
A
125
°
C, GND = 0V, unless
otherwise noted. Typical values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions, unless
otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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