參數(shù)資料
型號(hào): MCZ33689DEW
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: System Basis Chip with LIN Transceiver
中文描述: 系統(tǒng)基礎(chǔ)芯片的LIN收發(fā)器
文件頁數(shù): 5/31頁
文件大?。?/td> 309K
代理商: MCZ33689DEW
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33689
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
V
PWR
Supply Voltage at VS1 and VS2
Continuous
Transient (Load Dump)
V
SUPDC
V
SUPTR
- 0.3 to 27
40
V
Supply Voltage at VDD and VCC
V
DD
- 0.3 to 5.5
V
Output Current at VDD
I
DD
Internally Limited
A
Logic Input Voltage at MOSI, SCLK,
CS
, IN,
and TXD
V
INLOG
- 0.3 to
V
DD
+ 0.3
V
Logic Output Voltage at MISO,
INT
,
RST
, and RXD
V
OUTLOG
- 0.3 to V
DD
+ 0.3
V
Input Voltage at E+ and E
-
V
E+
/ V
E
-
- 0.3 to 7.0
V
Input Current at E+ and E
-
I
E+
/
E
-
± 20
mA
Output Voltage at OUT
V
OUT
- 0.3 to V
CC
+ 0.33
V
Output Current at OUT
I
OUT
± 20
mA
Input Voltage at L1 and L2
DC Input with a 33 k
Resistor
Transient Input with External Component (per ISO7637 Specification) (See
Figure 4
, page
6
)
V
LXDC
V
LXTR
-18 to 40
±100
V
Input Output Voltage at LIN
DC Voltage
Transient Input Voltage with specified External Component
(per ISO7637
Specification) (See
Figure 4
, page
6
)
V
BUSDC
V
BUSTR
-18 to 40
-150 to 100
V
DC Output Voltage at HS1 and HS2
Positive
Negative
V
HS+
V
HS
-
V
VS2
+ 0.3
Internally Clamped
V
DC Output Voltage at HS3
V
HS3
- 0.3 to V
VS2
+ 0.3
V
ESD Voltage, Human Body Model
(1)
GND Configured as Ground. TGND and AGND Configured as I/O Pins
LIN, L1, and L2
All Other Pins
V
ESD1
± 4000
± 2000
V
ESD Voltage, Charge Device Model
(1)
Corner Pins (Pins 1, 16, 17, and 32)
All other Pins (Pins 2 – 15 and 18 – 31)
V
ESD2
± 750
± 500
V
Notes
1.
ESD1 testing is performed in accordance with the Human Body Model (C
ZAP
= 100 pF, R
ZAP
= 1500
), ESD2 testing is performed in
accordance with the Charge Device Model, Robotic (C
ZAP
= 4.0 pF).
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