參數(shù)資料
型號(hào)： MCRF455
廠商： Microchip Technology Inc.
英文描述： 13.56 MHz Read/Write Passive RFID Device
中文描述： 13.56 MHz讀/寫無(wú)源RFID器件
文件頁(yè)數(shù)： 38/50頁(yè)
文件大小： 1172K
代理商： MCRF455
MCRF450/451/452/455
DS40232H-page 38
2003 Microchip Technology Inc.
EXAMPLE 9-3:
TO WRITE DATA INTO THE DEVICE
The Interrogator command structure for writing (see
Section 6.2.1 “Structure of Read/ Write Command Signals”
) is:
Calibration pulse + Writing Command (MSN first) + Address (MSN first) + Data (LSN first) + Parity/CRC (LSN first)
If the Interrogator wants to write data “0123cdef (hex, MSB to LSB)” to Block 5, the following message will be sent:
Calibration pulse + Write Command (MSN first) + Address (MSN first) + Data (LSN first) + Parity/CRC (LSN first)
= Cal. pulse +
101
(Write command) +
00101
(address) + f e d c 3 2 1 0 (data, hex) + CRC
= Calibration pulse + a 5 f e d c 3 2 1 0 6 0 2 e (hex string)
The hex string above is encoded with the 1-of-16 PPM signals. See Figure 6-10 for the 1-of-16 PPM representation of
hex values.
Referring to Figure 6-10, the gap positions in the 1-of-16 PPM for the above hex string are:
Positions 10 (a), 5 (5), 15 (f), 14 (e), 13 (d), 12 (c), 3 (3), 2 (2), 1 (1), 0 (0), 6 (6), 0 (0), 2 (2), e (14).
Device Response:
1.
If writing is completed: The device sends the written data after 5 msec of EEPROM writing time.
2.
If writing is failed due to insufficient programming voltage for unprotected block: The device sends the current
block data after about 500
μ
sec of delay.
3.
If writing is failed because the block is write-protected block: The device sends the current block data immediately
after the command.
4.
If writing is failed due to incorrect CRC: The device does not respond at all.
FIGURE 9-1:
FLOW CHART FOR THE DEVICE RESPONSE TO THE WRITE COMMAND
Note:
CRC = CRC for the Write command, address, and data. Calibration pulse is not included for the CRC
calculation. See Application Note AN752 (DS00752) for the CRC calculation algorithm.
Wait for
Command
Received
Write Command
Is CRC
Correct
Read and Send
EEPROM
Block Data
Start High Voltage
and Wait for about
500
μ
sec
Have sufficient
High Voltage for
Write EEPROM
Data (5 msec)
Yes
No
Yes
Yes
Yes
No
No
No
Is the Block
Write-Protected
programming
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