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| 型號： | MCR8SN |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管) |
| 中文描述： | 8 A, 800 V, SCR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 58K |
| 代理商： | MCR8SN |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 3
1
Publication Order Number:
MCR8S/D
MCR8SD, MCR8SM, MCR8SN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
halfwave, silicon gatecontrolled devices are needed.
Features
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
Blocking Voltage to 800 Volts
OnState Current Rating of 8 Amperes RMS at 80
°
C
High Surge Current Capability 80 Amperes
Rugged, Economical TO220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
Immunity to dv/dt 5 V/ sec Minimum at 110
°
C
PbFree Packages are Available*
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(T
J
= 40 to 110
°
C, Sine Wave,
50 to 60 Hz,
Gate Open)
MCR8SD
MCR8SM
MCR8SN
V
DRM,
V
RRM
400
600
800
V
On-State RMS Current
(180
°
Conduction Angles; T
C
= 80
°
C)
I
T(RMS)
8.0
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 110
°
C)
I
TSM
80
A
Circuit Fusing Consideration (t = 8.33 ms)
I
2
t
26.5
A
2
sec
Forward Peak Gate Power
(Pulse Width
≤
1.0 s, T
C
= 80
°
C)
P
GM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, T
C
= 80
°
C)
P
G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width
≤
1.0 s, T
C
= 80
°
C)
I
GM
2.0
A
Operating Junction Temperature Range
T
J
T
stg
40 to 110
°
C
°
C
Storage Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
40 to 150
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
8 AMPERES RMS
400 thru 800 VOLTS
TO220AB
CASE 221A09
STYLE 3
1
http://onsemi.com
MARKING
DIAGRAM
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= PbFree Package
= Diode Polarity
23
Device
Package
Shipping
ORDERING INFORMATION
MCR8SD
TO220AB
50 Units / Rail
MCR8SN
TO220AB
50 Units / Rail
MCR8SDG
TO220AB
(PbFree)
50 Units / Rail
MCR8SNG
TO220AB
(PbFree)
50 Units / Rail
Preferred
devices are recommended choices for future use
and best overall value.
MCR8SM
TO220AB
50 Units / Rail
MCR8SMG
TO220AB
(PbFree)
50 Units / Rail
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4
Anode
AY WW
MCR8SxG
AKA
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