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參數(shù)資料
| 型號： | MCR8DCN |
| 廠商： | Motorola, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 101K |
| 代理商： | MCR8DCN |
1
Motorola Thyristor Device Data
Motorola, Inc. 1997
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR8DCN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR8DCNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR8DCN–1
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125
°
C)
MCR8DCM
MCR8DCN
VDRM
VRRM
600
800
Volts
On–State RMS Current
(All Conduction Angles; TC = 105
°
C)
IT(RMS)
8.0
Amps
Average On–State Current (All Conduction Angles; TC = 105
°
C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125
°
C)
IT(AV)
ITSM
5.1
80
Circuit Fusing Consideration (t = 8.3 msec)
I2t
26
A2sec
Peak Gate Power
(Pulse Width
≤
10 sec, TC = 105
°
C)
PGM
5.0
Watts
Average Gate Power
(t = 8.3 msec, TC = 105
°
C)
PG(AV)
0.5
Peak Gate Current (Pulse Width
≤
10
sec, TC = 105
°
C)
Operating Junction Temperature Range
IGM
TJ
Tstg
2.0
Amps
–40 to 125
°
C
Storage Temperature Range
–40 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (2)
RJC
RJA
RJA
TL
2.2
88
80
°
C/W
Maximum Lead Temperature for Soldering Purposes (3)
260
°
C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8
″
from case for 10 seconds.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MCR8DCM/D
SEMICONDUCTOR TECHNICAL DATA
SCRs
8.0 AMPERES RMS
600 thru 800 VOLTS
CASE 369A–13
STYLE 4
A
K
G
A
G
A
K
Motorola Preferred Devices
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR8DSM | Silicon Controlled Rectifiers |
| MCR8DSN | Silicon Controlled Rectifiers |
| MCR8S | Silicon Controlled Rectifiers |
| MCR8 | SCRs 8 AMPERES RMS 400 thru 800 VOLTS |
| MCT1413B | High Voltage, High Current Darlington Transistor Array |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR8DCNT4 | 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR8DCNT4G | 功能描述:SCR 800V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR8DSM | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Silicon Controlled Rectifiers |
| MCR8DSMT4 | 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR8DSMT4G | 功能描述:SCR 600V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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