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參數(shù)資料
| 型號(hào)： | MCR72-3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | CONTACT |
| 中文描述： | 8 A, 100 V, SCR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 85K |
| 代理商： | MCR72-3 |
2
Motorola Thyristor Device Data
MAXIMUM RATINGS —
continued
Rating
Symbol
Value
Unit
Storage Temperature Range
Tstg
—
–40 to + 150
°
C
Mounting Torque
8
in. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
2.2
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, RGK = 1 k
unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward or Reverse Blocking Current(1)
(VAK = Rated VDRM or VRRM) TJ = 25
°
C
TJ = 110
°
C
IDRM, IRRM
—
—
—
—
10
500
μ
A
μ
A
On-State Voltage
(ITM = 16 A Peak, Pulse Width
Gate Trigger Current (Continuous dc)(2)
(VD = 12 V, RL = 100
)
1 ms, Duty Cycle
2%)
VTM
—
1.7
2
Volts
IGT
—
30
200
μ
A
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
(VD = Rated VDRM, RL = 10 k
, TJ = 110
°
C)
VGT
—
0.1
0.5
—
1.5
—
Volts
Holding Current
(VD = 12 V, ITM = 100 mA)
IH
—
—
6
mA
Critical Rate-of-Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110
°
C, Exponential Waveform)
dv/dt
—
10
—
V/
μ
s
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)
tgt
—
1
—
μ
s
1. Ratings apply for negative gate voltage or RGK = 1 k
. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RGK current.
100
80
70
90
110
8.0
6.0
4.0
2.0
FIGURE 1 – AVERAGE CURRENT DERATING
dc
90
°
60
°
α
= 30
°
α
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
0
α
= Conduction Angle
180
°
α
= 30
°
8.0
6.0
4.0
2.0
4.0
8.0
12
16
dc
180
°
90
°
FIGURE 2 – ON-STATE POWER DISSIPATION
0
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
60
°
α
α
= Conduction Angle
0
T
C
C
°
P
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR72-3G | 功能描述:SCR 100V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72-6 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR72-6G | 功能描述:SCR 400V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72-6T | 功能描述:SCR 400V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR72-6TG | 功能描述:SCR 400V 8A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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