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參數(shù)資料
| 型號(hào)： | MCR506 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | MCR506 |
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
3
°
C/W
Thermal Resistance, Junction to Ambient
75
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C, RGK = 1000 Ohms unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Forward Blocking Current
(VD = Rated VDRM, TJ = 110
°
C)
IDRM
—
—
200
μ
A
Peak Reverse Blocking Current
(VR = Rated VRRM, TJ = 110
°
C)
IRRM
—
—
200
μ
A
Forward “On” Voltage
(ITM = 12 A Peak)
VTM
—
—
1.9
Volts
Gate Trigger Current (Continuous dc)
(VAK = 7 Vdc, RL = 100 Ohms)
(VAK = 7 Vdc, RL = 100 Ohms, TC = –40
°
C)
IGT
—
—
—
—
200
500
μ
A
Gate Trigger Voltage (Continuous dc)
(VAK = 7 Vdc, RL = 100 Ohms, TC = 25
°
C)
VGT
—
—
1
Volts
Gate Non-Trigger Voltage
(VAK = Rated VDRM, RL = 100 Ohms, TJ = 110
°
C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 7 Vdc, TC = 25
°
C)
IH
—
—
5
mA
Forward Voltage Application Rate
(VD = Rated VDRM, Exponential Waveform, TJ = 110
°
C)
dv/dt
—
10
—
V/
μ
s
FIGURE 1 — CURRENT DERATING
FIGURE 2 — POWER DISSIPATION
7.0
6.0
5.0
4.0
3.0
2.0
1.0
105
0
70
75
80
85
90
95
100
110
IT(RMS), RMS ON-STATE CURRENT (AMPS)
10.0
0
2.0
4.0
6.0
6.0
8.0
0
1.0
2.0
3.0
4.0
5.0
7.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
T
C
°
(
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