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參數(shù)資料
| 型號(hào)： | MCR265-6 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier Reverse Blocking Thyristor(55A，400V硅控整流器反向截止晶閘管) |
| 中文描述： | 55 A, 400 V, SCR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | MCR265-6 |
MCR265–4 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
TL
0.9
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM, IRRM
—
—
—
—
10
2.0
μ
A
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage(1)
(ITM = 110 A)
VTM
—
1.5
1.9
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
(TC = –40
°
C)
IGT
—
—
20
40
50
90
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
VGT
—
1.0
1.5
Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125
°
C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
—
30
75
mA
Turn-On Time
(ITM = 55 A, IGT = 200 mAdc)
DYNAMIC CHARACTERISTICS
tgt
—
1.5
—
μ
s
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Width
300
μ
s, Duty Cycle
dv/dt
—
50
—
V/
μ
s
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCR265-8 | Silicon Controlled Rectifier Reverse Blocking Thyristor(55A，600V硅控整流器反向截止晶閘管) |
| MCR310-10 | Silicon Controlled Rectifiers( 可控硅整流器) |
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| MCR60A-98D-2.54DSA | ISA Bus (AT bus) |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MCR265-7 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:Thyristors |
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| MCR265-9 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:Thyristors |
| MCR3 | 制造商:Cooper Interconnect 功能描述: |
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