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參數(shù)資料
| 型號(hào)： | MCR310-10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifiers( 可控硅整流器) |
| 中文描述： | 10 A, 800 V, SCR, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 50K |
| 代理商： | MCR310-10 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MCR310/D
MCR310 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
Center Gate Geometry for Uniform Current Density
All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Low Trigger Currents, 200 A Maximum for Direct Driving from
Integrated Circuits
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse
Blocking Voltage
(1)
(T
J
= 40 to 110
°
C)
(1/2 Sine Wave, R
GK
= 1 k
Ω
)
MCR310-6
MCR310-8
MCR310-10
V
DRM
or
V
RRM
400
600
800
Volts
On-State RMS Current (T
C
= 75
°
C)
I
T(RMS)
10
Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, T
J
= 40 to 110
°
C)
I
TSM
100
Amps
Circuit Fusing (t = 8.3 ms)
I
2
t
40
A
2
s
Peak Gate Voltage (t
10 s)
V
GM
±
5
Volts
Peak Gate Current (t
10 s)
I
GM
1
Amp
Peak Gate Power (t
10 s)
P
GM
5
Watts
Average Gate Power
P
G(AV)
0.75
Watt
Operating Junction Temperature Range
T
J
40 to +110
°
C
Storage Temperature Range
T
stg
40 to +150
°
C
Mounting Torque
8
in.-lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2.2
°
C/W
Thermal Resistance, Junction to Ambient
R
θ
JA
60
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
10 AMPERES RMS
400 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MCR3106
TO220AB
500/Box
MCR3108
TO220AB
MCR31010
TO220AB
500/Box
500/Box
C
G
A
TO220AB
CASE 221A
STYLE 3
123
4
http://onsemi.com
MARKING
DIAGRAM
x
A
Y
WW
G
= 6, 8 or 10
= Assembly Location
= Year
= Work Week
= PbFree Package
MCR3106G
TO220AB
(PbFree)
500/Box
MCR3108G
TO220AB
(PbFree)
500/Box
MCR31010G
TO220AB
(PbFree)
500/Box
MCR310xG
AYWW
Preferred
devices are recommended choices for future use
and best overall value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR310-10G | 功能描述:SCR 800V 10A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR3103 | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9B |
| MCR310-3 | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9B |
| MCR310-6 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors |
| MCR310-6G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors |
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