參數(shù)資料
型號： MCR12DSN
廠商： ON SEMICONDUCTOR
英文描述： Sensitive Gate Silicon Controlled Rectifiers(可控硅整流管)
中文描述： 敏感柵硅（可控硅整流管控整流器）
文件頁數(shù)： 2/7頁
文件大?。?/td> 73K
代理商： MCR12DSN
MCR12DSM, MCR12DSN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
Thermal Resistance
JunctiontoAmbient
Thermal Resistance
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
2.2
88
80
°
C/W
Maximum Lead Temperature for Soldering Purposes (Note 3)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(V
AK
= Rated V
DRM
or V
RRM
; R
GK
= 1.0 K )
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
10
500
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (I
GR
= 10 A)
Peak Reverse Gate Blocking Current, (V
GR
= 10 V)
V
GRM
10
12.5
18
V
I
GRM
1.2
A
Peak Forward OnState Voltage (Note 5), (I
TM
= 20 A)
V
TM
1.3
1.9
V
Gate Trigger Current (Continuous dc) (Note 6)
(V
D
= 12 V, R
L
= 100 )
T
J
= 25
°
C
T
J
= 40
°
C
I
GT
5.0
12
200
300
A
Gate Trigger Voltage (Continuous dc) (Note 6)
(V
D
= 12 V, R
L
= 100 )
T
J
= 25
°
C
T
J
= 40
°
C
T
J
= 110
°
C
V
GT
0.45
0.2
0.65
1.0
1.5
V
Holding Current
(V
D
= 12 V, Initiating Current = 200 mA, Gate Open)
T
J
= 25
°
C
T
J
= 40
°
C
I
H
0.5
1.0
6.0
10
mA
Latching Current
(V
D
= 12 V, I
G
= 2.0 mA)
T
J
= 25
°
C
T
J
= 40
°
C
I
L
0.5
1.0
6.0
10
mA
TurnOn Time
(Source Voltage = 12 V, R
S
= 6.0 K , I
T
= 16 A(pk), R
GK
= 1.0 K )
(V
D
= Rated V
DRM
, Rise Time = 20 ns, Pulse Width = 10 s)
tgt
2.0
5.0
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(V
D
= 0.67 x Rated V
DRM
, Exponential Waveform, R
GK
= 1.0 K , T
J
= 110
°
C)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8
″
from case for 10 seconds.
4. Ratings apply for negative gate voltage or R
GK
= 1.0 k . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
6. R
GK
current not included in measurement.
dv/dt
2.0
10
V/ s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCR12DSN-001 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR12DSN-001G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN-1G 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR12DSNT4 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
MCR12DSNT4G 功能描述:SCR 800V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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