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參數(shù)資料
| 型號： | MCR12 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Silicon Controlled Rectifiers( 可控硅整流器) |
| 中文描述： | 硅（可控硅整流器控制整流器） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 55K |
| 代理商： | MCR12 |
MCR12D, MCR12M, MCR12N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
°
C/W
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
T
L
2.2
62.5
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
D
= Rated V
DRM
and V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 125
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak Forward OnState Voltage (Note 2) (I
TM
= 24 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V; R
L
= 100 )
Holding Current (V
D
= 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (V
D
= 12 V, I
G
= 20 mA)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V; R
L
=100 )
V
TM
I
GT
I
H
I
L
V
GT
2.2
V
2.0
8.0
20
mA
4.0
20
40
mA
6.0
25
60
mA
0.5
0.65
1.0
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of OffState Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125
°
C)
dv/dt
100
250
V/ s
Repetitive Critical Rate of Rise of OnState Current
IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/ sec, Igt = 50 mA
di/dt
50
A/ s
2. Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
(off state)
I
RRM
at V
RRM
90
°
180
°
Figure 1. Typical RMS Current Derating
Figure 2. OnState Power Dissipation
8
0
I
T(RMS)
, RMS ONSTATE CURRENT (AMPS)
125
120
I
T(AV)
, AVERAGE ONSTATE CURRENT (AMPS)
3
8
0
8
4
2
0
TC
P
115
105
1
2
3
1
2
6
10
20
18
°
,
(
dc
180
°
90
°
60
°
dc
30
°
5
4
5
110
4
100
90
95
6
7
12
14
6
7
12
9
10
11
30
°
12
9
10
11
16
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCR1206-1300F | 制造商:RCD Components Inc 功能描述:CR1206-1300F |
| MCR1206-241J | 制造商:RCD Components Inc 功能描述:CR1206-241F |
| MCR-12A | 制造商:Cooper Bussmann 功能描述: |
| MCR12D | 功能描述:SCR 400V 12A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| MCR12DCM | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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